Pages that link to "Item:Q4728191"

The following pages link to Semiconductor device modelling from the numerical point of view (Q4728191):

Displaying 50 items.

• Semiconductor device design using the \textsc{BiMADS} algorithm (Q401540) (← links)
• Collocation method using artificial viscosity for solving stiff singularly perturbed turning point problem having twin boundary layers (Q552351) (← links)
• Preconditioned CG-type methods for solving the coupled system of fundamental semiconductor equations (Q581997) (← links)
• A brief survey on numerical methods for solving singularly perturbed problems (Q618050) (← links)
• Moore's law and numerical modeling (Q697750) (← links)
• Derivation of a quasi-linear second-order elliptic-parabolic model for the efficiency of silicon solar cells (Q821852) (← links)
• Numerical solutions of singularly perturbed one-dimensional parabolic convection-diffusion problems by the Bessel collocation method (Q902505) (← links)
• A nonlinear multigrid method for one-dimensional semiconductor device simulation: Results for the diode (Q911239) (← links)
• Numerical simulation of semiconductor devices (Q912746) (← links)
• A uniformly convergent B-spline collocation method on a nonuniform mesh for singularly perturbed one-dimensional time-dependent linear convection-diffusion problem (Q939530) (← links)
• Numerical solution of singularly perturbed convection-diffusion problem using parameter uniform B-spline collocation method (Q1018368) (← links)
• Finite element methods for convection-diffusion problems using exponential splines on triangles (Q1129500) (← links)
• A new viewpoint on mixed elements (Q1200366) (← links)
• Strategies for mesh-handling and model specification within a highly flexible simulation framework (Q1276554) (← links)
• On the numerical solution of the three-dimensional semiconductor device equations on vector-concurrent computers (Q1366100) (← links)
• A numerical study on Neumann-Neumann and FETI methods for \(hp\) approximations on geometrically refined boundary layer meshes in two dimensions. (Q1420983) (← links)
• Domain decomposition technique for the continuity equations of semiconductor device models (Q1822916) (← links)
• Adaptive multigrid applied to a bipolar transistor problem (Q1891033) (← links)
• Massively parallel methods for semiconductor device modelling (Q1906679) (← links)
• Generalized conjugate gradient squared (Q1919946) (← links)
• Enriched residual free bubbles for semiconductor device simulation (Q1937034) (← links)
• A new upwind difference analysis of an exponentially graded Bakhvalov-type mesh for singularly perturbed elliptic convection-diffusion problems (Q2088798) (← links)
• Robust higher order finite difference scheme for singularly perturbed turning point problem with two outflow boundary layers (Q2245005) (← links)
• Hexahedral finite elements for the stationary semiconductor device equations (Q2277790) (← links)
• Electro-thermo-chemical computational models for 3D heterogeneous semiconductor device simulation (Q2278787) (← links)
• On the composite discontinuous Galerkin method for simulations of electric properties of semiconductor devices (Q2323023) (← links)
• Simulation of visible and ultra-violet group-III nitride light emitting diodes (Q2490311) (← links)
• Convexity of trace functionals and Schrödinger operators (Q2491612) (← links)
• Finite element approximation of electrostatic potential in one dimensional multilayer structures with quantized electronic charge (Q2639610) (← links)
• A uniformly convergent quadratic \(B\)-spline based scheme for singularly perturbed degenerate parabolic problems (Q2670396) (← links)
• A physics-based strategy for choosing initial iterate for solving drift-diffusion equations (Q2679364) (← links)
• An efficient numerical technique for two-parameter singularly perturbed problems having discontinuity in convection coefficient and source term (Q2686549) (← links)
• The numerical simulation of the p-n barrier capacity in semiconductor device structures (Q2733741) (← links)
• (Q2969255) (← links)
• The Midpoint Upwind Finite Difference Scheme for Time-Dependent Singularly Perturbed Convection-Diffusion Equations on Non-Uniform Mesh (Q3118302) (← links)
• ON THE STABILITY OF TIME DISCRETISATIONS FOR THE SEMICONDUCTOR EQUATIONS (Q3358198) (← links)
• (Q3359692) (← links)
• Crank–Nicolson finite difference method based on a midpoint upwind scheme on a non-uniform mesh for time-dependent singularly perturbed convection–diffusion equations (Q3506255) (← links)
• (Q3785878) (← links)
• Two-dimensional non-stationary numerical model for MSM structures (Q4263971) (← links)
• (Q4298149) (← links)
• ADVANCED NUMERICAL TECHNIQUES IN SEMICONDUCTOR DEVICE SIMULATION (Q4305215) (← links)
• AN EXPONENTIAL FITTING SCHEME FOR THE ELECTROTHERMAL DEVICE EQUATIONS SPECIFICALLY FOR THE SIMULATION OF AVALANCHE GENERATION (Q4313829) (← links)
• A QUANTUM TRANSMITTING SCHRÖDINGER–POISSON SYSTEM (Q4818876) (← links)
• THE INCLUSION OF A FINITE CAPTURE TIME IN NUMERICAL DEVICE SIMULATION (Q4835963) (← links)
• MIXED FINITE ELEMENT SIMULATION OF HETEROJUNCTION STRUCTURES INCLUDING A BOUNDARY LAYER MODEL FOR THE QUASI‐FERMI LEVELS (Q4835971) (← links)
• Second-order parameter-uniform finite difference scheme for singularly perturbed parabolic problem with a boundary turning point (Q4991844) (← links)
• (Q5082022) (← links)
• (Q5468019) (← links)
• Less Emphasis on Hard Regions: Curriculum Learning of PINNs for Singularly Perturbed Convection-Diffusion-Reaction Problems (Q6192635) (← links)