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Adaptive multigrid applied to a bipolar transistor problem - MaRDI portal

Adaptive multigrid applied to a bipolar transistor problem (Q1891033)

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scientific article; zbMATH DE number 758539
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Adaptive multigrid applied to a bipolar transistor problem
scientific article; zbMATH DE number 758539

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    Adaptive multigrid applied to a bipolar transistor problem (English)
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    28 May 1995
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    The author considers the numerical solution of steady two-dimensional semiconductor equations. This is carried out by means of mixed finite element method on rectangles. The influence of quadrature is discussed, and Vanka-type relaxation is used, a comparison of the efficiency of pointwise and linewise methods being given. It is pointed out that for the use of a multigrid method, a hierarchy of grids is needed and estimates of truncation errors are given: a particular example is used and it is shown that the method gives satisfactory results.
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    bipolar transistor problem
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    semiconductor equations
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    mixed finite element method
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    relaxation
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    multigrid method
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