Pages that link to "Item:Q478659"
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The following pages link to Analysis on the initial-boundary value problem of a full bipolar hydrodynamic model for semiconductors (Q478659):
Displaying 10 items.
- Relaxation limit in bipolar semiconductor hydrodynamic model with non-constant doping profile (Q730221) (← links)
- Existence and uniqueness of stationary solutions to a one-dimensional bipolar hydrodynamic model of semiconductors (Q984048) (← links)
- Stability of the stationary solution of the Cauchy problem to a semiconductor full hydrodynamic model with recombination-generation rate (Q2514562) (← links)
- The Analysis of a Model for Wave Motion in a Liquid Semiconductor: Boundary Interaction and Variable Conductivity (Q3971173) (← links)
- THE GLOBAL WEAK SOLUTION AND RELAXATION LIMITS OF THE INITIAL–BOUNDARY VALUE PROBLEM TO THE BIPOLAR HYDRODYNAMIC MODEL FOR SEMICONDUCTORS (Q4798842) (← links)
- The well-posedness of bipolar semiconductor hydrodynamic model with recombination-generation rate on the bounded interval (Q5109250) (← links)
- Asymptotics of initial boundary value problems for hydrodynamic and drift diffusion models for semiconductors (Q5931938) (← links)
- On the initial-boundary value problem for the bipolar hydrodynamic model for semiconductors (Q5937326) (← links)
- 3D full hydrodynamic model for semiconductor optoelectronic devices: stability of thermal equilibrium states (Q6559417) (← links)
- Semiclassical limit of a simplified quantum energy-transport model for bipolar semiconductors. (Q6648034) (← links)
