Pages that link to "Item:Q4799000"
From MaRDI portal
The following pages link to SIMULATION OF SOME QUANTUM MODELS FOR SEMICONDUCTORS (Q4799000):
Displaying 10 items.
- Modelling of the influence of interelectronic interaction on the stationary characteristics of a resonant tunnel diode with spacer layers (Q610269) (← links)
- Nonlinear problems in quantum semiconductor modeling. (Q1875657) (← links)
- Simulation of visible and ultra-violet group-III nitride light emitting diodes (Q2490311) (← links)
- Numerical approximation of the viscous quantum hydrodynamic model for semiconductors (Q2495812) (← links)
- Existence of global weak solutions for Navier-Stokes-Poisson equations with quantum effect and convergence to incompressible Navier-Stokes equations (Q2795374) (← links)
- A primer for resonant tunnelling (Q2867205) (← links)
- SIMULATION OF DEFECT ASSISTED TUNNELING AND ITS EFFECT ON I‐V CHARACTERISTICS IN RESONANT TUNNELING DIODES (Q4315358) (← links)
- A QUANTUM TRANSMITTING SCHRÖDINGER–POISSON SYSTEM (Q4818876) (← links)
- Global existence of weak solution for quantum Navier-Stokes-Poisson equations (Q5354875) (← links)
- (Q5705856) (← links)