SIMULATION OF DEFECT ASSISTED TUNNELING AND ITS EFFECT ON I‐V CHARACTERISTICS IN RESONANT TUNNELING DIODES (Q4315358)
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scientific article; zbMATH DE number 700450
| Language | Label | Description | Also known as |
|---|---|---|---|
| English | SIMULATION OF DEFECT ASSISTED TUNNELING AND ITS EFFECT ON I‐V CHARACTERISTICS IN RESONANT TUNNELING DIODES |
scientific article; zbMATH DE number 700450 |
Statements
SIMULATION OF DEFECT ASSISTED TUNNELING AND ITS EFFECT ON I‐V CHARACTERISTICS IN RESONANT TUNNELING DIODES (English)
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8 December 1994
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tunneling current
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defect model
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I-V simulation
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resonant tunneling diodes
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transmission coefficients
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I-V characteristics
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Poisson's equation
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quantum mechanical tunneling
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0.7164937257766724
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0.7052290439605713
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