Pages that link to "Item:Q658896"
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The following pages link to 2d numerical simulations of an electron-phonon hydrodynamical model based on the maximum entropy principle (Q658896):
Displaying 16 items.
- Existence and uniqueness for a two-temperature energy-transport model for semiconductors (Q508977) (← links)
- Hydrodynamic modeling of hot-carrier effects in a PN junction solar cell (Q683560) (← links)
- Group classification of an energy transport model for semiconductors with crystal heating (Q747215) (← links)
- 2D simulation of a silicon MESFET with a nonparabolic hydrodynamical model based on the maximum entropy principle (Q1604436) (← links)
- Electron-phonon interactions in the Fermi-Dirac spintronics (Q1782504) (← links)
- Numerical simulation of a double-gate MOSFET with a subband model for semiconductors based on the maximum entropy principle (Q1939398) (← links)
- Electro-thermo-chemical computational models for 3D heterogeneous semiconductor device simulation (Q2278787) (← links)
- A moment model for phonon transport at room temperature (Q2359103) (← links)
- Moment model and boundary conditions for energy transport in the phonon gas (Q2630648) (← links)
- 2DEG-3DEG charge transport model for MOSFET based on the maximum entropy principle (Q2862273) (← links)
- Electron transport enhanced molecular dynamics for metals and semi‐metals (Q3164526) (← links)
- Exact Maximum Entropy Closure of the Hydrodynamical Model for Si Semiconductors: The 8-Moment Case (Q3575171) (← links)
- Generation-recombination Models in the Matrix Kinetic Approach to Spintronics (Q5029211) (← links)
- Charge Transport in Graphene including Thermal Effects (Q5346790) (← links)
- Two-dimensional phonon hydrodynamics in narrow strips (Q5363417) (← links)
- Nine-moment phonon hydrodynamics based on the maximum-entropy closure: one-dimensional flow (Q5699723) (← links)
