Pages that link to "Item:Q2862273"
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The following pages link to 2DEG-3DEG charge transport model for MOSFET based on the maximum entropy principle (Q2862273):
Displaying 6 items.
- Simulation of a double-gate MOSFET by a non-parabolic energy-transport subband model for semiconductors based on the maximum entropy principle (Q462764) (← links)
- Boltzmann's six-moment one-dimensional nonlinear system equations with the Maxwell-Auzhan boundary conditions (Q670268) (← links)
- Numerical simulation of a double-gate MOSFET with a subband model for semiconductors based on the maximum entropy principle (Q1939398) (← links)
- An improved 2D-3D model for charge transport based on the maximum entropy principle (Q2201622) (← links)
- Hydrodynamical model for charge transport in graphene (Q2254908) (← links)
- A new rule for MESFET gate charge division based on the energy conservation principle (Q4810535) (← links)
