Pages that link to "Item:Q2902820"

The following pages link to Numerical Simulation of a Hydrodynamic Subband Model for Semiconductors Based on the Maximum Entropy Principle (Q2902820):

Displaying 7 items.

• Simulation of a double-gate MOSFET by a non-parabolic energy-transport subband model for semiconductors based on the maximum entropy principle (Q462764) (← links)
• Maximum-entropy principle for nonlinear hydrodynamic transport in semiconductors (Q841905) (← links)
• Diffusive limit of the two-band \(k\cdot p\) model for semiconductors (Q967679) (← links)
• Numerical simulation of a double-gate MOSFET with a subband model for semiconductors based on the maximum entropy principle (Q1939398) (← links)
• A hierarchy of macroscopic models for phonon transport in graphene (Q2140754) (← links)
• An improved 2D-3D model for charge transport based on the maximum entropy principle (Q2201622) (← links)
• Exact Maximum Entropy Closure of the Hydrodynamical Model for Si Semiconductors: The 8-Moment Case (Q3575171) (← links)