Pages that link to "Item:Q3156132"

The following pages link to Charge transport in 1D silicon devices via Monte Carlo simulation and Boltzmann‐Poisson solver (Q3156132):

Displaying 19 items.

• Simulation of a double-gate MOSFET by a non-parabolic energy-transport subband model for semiconductors based on the maximum entropy principle (Q462764) (← links)
• Hydrodynamic simulation of a \(n^{+}-n-n^{+}\) silicon nanowire (Q738065) (← links)
• A WENO-solver for the transients of Boltzmann-Poisson system for semiconductor devices: Performance and comparisons with Monte Carlo methods. (Q1873343) (← links)
• A non parabolic hydrodynamical subband model for semiconductors based on the maximum entropy principle (Q1931019) (← links)
• Numerical simulation of a double-gate MOSFET with a subband model for semiconductors based on the maximum entropy principle (Q1939398) (← links)
• Discontinuous Galerkin deterministic solvers for a Boltzmann-Poisson model of hot electron transport by averaged empirical pseudopotential band structures (Q2309885) (← links)
• 2D semiconductor device simulations by WENO-Boltzmann schemes: efficiency, boundary conditions and comparison to Monte Carlo methods (Q2490272) (← links)
• Electrothermal Transport in Silicon Carbide Semiconductors via a Hydrodynamic Model (Q2945469) (← links)
• Heat generation in silicon nanometric semiconductor devices (Q2970720) (← links)
• Numerical schemes for solving the non-stationary Boltzmann-Poisson system for two-dimensional semiconductor devices (Q3375312) (← links)
• (Q3525899) (← links)
• Monte Carlo evaluation of the transport coefficients in a n⁺ – n – n⁺ silicon diode (Q4519080) (← links)
• Monte Carlo Simulation of Narrow-Width SOI Devices: Incorporation of the Short Range Coulomb Interaction (Q4655091) (← links)
• Optimal Control for Semiconductor Diode Design based on the MEP Energy-Transport Model (Q5066291) (← links)
• A combined multicell‐WENO solver for the Boltzmann‐Poisson system of 1D semiconductor devices (Q5707802) (← links)
• A finite difference scheme solving the Boltzmann-Poisson system for semiconductor devices (Q5957383) (← links)
• Numerical scheme for the far-out-of-equilibrium time-dependent Boltzmann collision operator: 1D second-degree momentum discretisation and adaptive time stepping (Q6104167) (← links)
• Numerical solver for the time-dependent far-from-equilibrium Boltzmann equation (Q6104192) (← links)
• Numerical solver for the out-of-equilibrium time dependent Boltzmann collision operator: application to 2D materials (Q6156977) (← links)