Pages that link to "Item:Q3521649"
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The following pages link to OPTIMAL DOPANT PROFILING BASED ON ENERGY-TRANSPORT SEMICONDUCTOR MODELS (Q3521649):
Displaying 11 items.
- Geometric programming approach to doping profile design optimization of metal-oxide-semiconductor devices (Q462766) (← links)
- Recovering doping profiles in semiconductor devices with the Boltzmann-Poisson model (Q543757) (← links)
- On/off-state design of semiconductor doping profiles (Q1011867) (← links)
- Minimization of the base transit time in semiconductor devices using optimal control (Q1422588) (← links)
- Semiconductor device optimization in the presence of thermal effects (Q2856973) (← links)
- Energy transport in semiconductor devices (Q2929098) (← links)
- On the Modeling and Simulation of Reaction-Transfer Dynamics in Semiconductor-Electrolyte Solar Cells (Q3455383) (← links)
- (Q3618982) (← links)
- A GLOBALLY CONVERGENT GUMMEL MAP FOR OPTIMAL DOPANT PROFILING (Q3636496) (← links)
- Optimal Control for Semiconductor Diode Design based on the MEP Energy-Transport Model (Q5066291) (← links)
- The Quasi-Neutral Limit in Optimal Semiconductor Design (Q5348482) (← links)