Pages that link to "Item:Q462764"
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The following pages link to Simulation of a double-gate MOSFET by a non-parabolic energy-transport subband model for semiconductors based on the maximum entropy principle (Q462764):
Displaying 13 items.
- 2D simulation of a silicon MESFET with a nonparabolic hydrodynamical model based on the maximum entropy principle (Q1604436) (← links)
- Hybrid coupling of a one-dimensional energy-transport Schrödinger system (Q1682384) (← links)
- A posteriori error control in numerical simulations of semiconductor nanodevices (Q1682685) (← links)
- A non parabolic hydrodynamical subband model for semiconductors based on the maximum entropy principle (Q1931019) (← links)
- Numerical simulation of a double-gate MOSFET with a subband model for semiconductors based on the maximum entropy principle (Q1939398) (← links)
- A new approach to numerical simulation of charge transport in double gate-MOSFET (Q2008027) (← links)
- An improved 2D-3D model for charge transport based on the maximum entropy principle (Q2201622) (← links)
- Hydrodynamical model for charge transport in graphene (Q2254908) (← links)
- Quantum corrected hydrodynamic models for charge transport in graphene (Q2334334) (← links)
- A parallel deterministic solver for the Schrödinger-Poisson-Boltzmann system in ultra-short DG-MOSFETs: Comparison with Monte-Carlo (Q2397192) (← links)
- Hydrodynamic equations for electrons in graphene obtained from the maximum entropy principle (Q3189949) (← links)
- A new rule for MESFET gate charge division based on the energy conservation principle (Q4810535) (← links)
- Charge Transport in Graphene including Thermal Effects (Q5346790) (← links)
