Pages that link to "Item:Q4835953"
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The following pages link to MIXED FINITE ELEMENT APPROACH AND NONLINEAR IMPLICIT SCHEMES FOR DRIFT‐DIFFUSION EQUATION SOLUTION OF 2D HETEROJUNCTION SEMICONDUCTOR DEVICES (Q4835953):
Displaying 10 items.
- Hybrid variable finite elements for semiconductor devices (Q918175) (← links)
- Classical solutions of drift-diffusion equations for semiconductor devices: The two-dimensional case (Q1030050) (← links)
- Finite element solution of the fundamental equations of semiconductor devices. II. (Q1771830) (← links)
- Analysis of a finite element method for the drift-diffusion semiconductor device equations: The multidimensional case (Q1899122) (← links)
- (Q3618972) (← links)
- (Q4203766) (← links)
- (Q4238902) (← links)
- Arclength continuation methods and applications to 2D drift‐diffusion semiconductor equations (Q4331568) (← links)
- Mixed finite volume methods for semiconductor device simulation (Q4342160) (← links)
- Simulation of submicron pseudomorphic AlGaAs/InGaAs/GaAs high electron mobility transistors (Q4537264) (← links)