On the design of base-collector junction of InGaAs/InP DHBT (Q1045417)
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scientific article; zbMATH DE number 5648332
| Language | Label | Description | Also known as |
|---|---|---|---|
| English | On the design of base-collector junction of InGaAs/InP DHBT |
scientific article; zbMATH DE number 5648332 |
Statements
On the design of base-collector junction of InGaAs/InP DHBT (English)
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15 December 2009
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InP
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double heterostructure bipolar transistor (DHBT)
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composite collector
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Kirk current
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0.7002156376838684
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0.6808600425720215
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0.6805335879325867
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0.6678850650787354
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