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Monte Carlo modelling of abrupt InP/InGaAs HBTs - MaRDI portal

Monte Carlo modelling of abrupt InP/InGaAs HBTs (Q4418191)

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scientific article; zbMATH DE number 1961654
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English
Monte Carlo modelling of abrupt InP/InGaAs HBTs
scientific article; zbMATH DE number 1961654

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    Monte Carlo modelling of abrupt InP/InGaAs HBTs (English)
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    7 August 2003
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    heterojunction bipolar transistor (HBT)
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    HBT modelling
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    Monte Carlo (MC) device simulation
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    electron transmission coefficient
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    InP
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    InGaAs
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    III-V semiconductors
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