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Behavior of the potential at the pn-junction for a model in semiconductor theory - MaRDI portal

Behavior of the potential at the pn-junction for a model in semiconductor theory (Q1173683)

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scientific article; zbMATH DE number 7258
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Behavior of the potential at the pn-junction for a model in semiconductor theory
scientific article; zbMATH DE number 7258

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    Behavior of the potential at the pn-junction for a model in semiconductor theory (English)
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    25 June 1992
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    The author studies the behavior of the second derivatives of the potential at the end-points of a pn-junction for a model of a semiconductor device. Typically, pure second order derivatives remain bounded, while mixed derivatives have a logarithmic singularity. Regarding the regularity at interior points of the junction, the author mentions a paper to appear in Ann. Mat. Pura Appl.
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    elliptic regularity
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    boundary behavior
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