CMOS realization of all-positive pinched hysteresis loops (Q1674964)
From MaRDI portal
| This is the item page for this Wikibase entity, intended for internal use and editing purposes. Please use this page instead for the normal view: CMOS realization of all-positive pinched hysteresis loops |
scientific article; zbMATH DE number 6798532
| Language | Label | Description | Also known as |
|---|---|---|---|
| English | CMOS realization of all-positive pinched hysteresis loops |
scientific article; zbMATH DE number 6798532 |
Statements
CMOS realization of all-positive pinched hysteresis loops (English)
0 references
26 October 2017
0 references
Summary: Two novel nonlinear circuits that exhibit an all-positive pinched hysteresis loop are proposed. These circuits employ two NMOS transistors, one of which operates in its triode region, in addition to two first-order filter sections. We show the equivalency to a charge-controlled resistance (memristance) in a decremental state via detailed analysis. Simulation and experimental results verify the proposed theory.
0 references
nonlinear circuits
0 references
all-positive pinched hysteresis loop
0 references
NMOS transistors
0 references
charge-controlled resistance (memristance)
0 references