Modeling of processes in tunneling lithography (Q1895060)
From MaRDI portal
 | This is the item page for this Wikibase entity, intended for internal use and editing purposes. Please use this page instead for the normal view: Modeling of processes in tunneling lithography |
scientific article; zbMATH DE number 780311
| Language | Label | Description | Also known as |
|---|---|---|---|
| English | Modeling of processes in tunneling lithography |
scientific article; zbMATH DE number 780311 |
Statements
Modeling of processes in tunneling lithography (English)
0 references
6 August 1995
0 references
We describe modeling methods and results for a new technological process that combines the tunneling effect with cybernetic control methods to achieve further reduction of VLSI components to nanometer dimensions (tunneling lithography).
0 references
axisymmetric Laplace equation
0 references
boundary conditions
0 references
further reduction of VLSI components
0 references
