A finite-volume scheme for a spinorial matrix drift-diffusion model for semiconductors (Q2808864)

The analysis of the electron spin in semiconductor devices is a very important direction in future electronics. Thanks to the control of electron current, one can obtain energy-saving and fast-switching devices. There are several models and interesting studies that describe spin-polarized transport in semiconductor structures and this paper is devoted to the analysis of a finite-volume scheme for a spin drift-diffusion modelling. In this case we have two main groups of such models. One is based on two-component drift-diffusion equations for the spin-up and spin-down densities. The second one is related to the spin variable as a vector quantity. In this approach the two-component drift-diffusion system is a special case. If it is assumed that the scattering rates are positive Hermitian matrices, and a general matrix diffusion model is proposed. In this paper this model is analyzed with implicit Euler finite volume approximation with numerical simulations in two space dimensions.NEWLINENEWLINEThe whole paper is divided into five sections. After the introduction and the description of the model, we have a presentation of the numerical scheme in Section 2 and main analytical results giving two theorems that are proved in Sections 3 and 4. The results of numerical tests are given in Section 5.