The model of radiation-induced conductivity in silicon (Q2830689)

The zone theory of crystal is taken as a basis of an approximation model describing the continuous electron retardation in a process of electron leaking on defects of a crystal mesh. The quantum kinetic equations for the distribution functions of the conductivity electrons in the phase space of coordinates and quasi-impulses are applied. Effective masses, densities of states, and group velocities of particles are found. The effectiveness of the model is tested by comparison with experimental data presenting a correspondence between mean electron velocities, electron field intensity and the electron energy velocity transfer to the mesh.