Global solution to the drift-diffusion-Poisson system for semiconductors with nonlinear recombination-generation rate (Q2864766)

From MaRDI portal





scientific article; zbMATH DE number 6232850
Language Label Description Also known as
English
Global solution to the drift-diffusion-Poisson system for semiconductors with nonlinear recombination-generation rate
scientific article; zbMATH DE number 6232850

    Statements

    Global solution to the drift-diffusion-Poisson system for semiconductors with nonlinear recombination-generation rate (English)
    0 references
    0 references
    0 references
    26 November 2013
    0 references
    drift-diffusion-Poisson system
    0 references
    global weak solution
    0 references
    uniqueness
    0 references
    long-time behavior
    0 references
    This paper deals with the study of a coupled system of parabolic-elliptic equations, which describe the drift-diffusion Poisson model. The authors are concerned with the qualitative analysis of this class of systems. The main results establish the existence and uniqueness of global weak solutions as well as the convergence of this solution to a unique equilibrium as time tends to infinity.
    0 references

    Identifiers

    0 references
    0 references
    0 references
    0 references
    0 references
    0 references
    0 references
    0 references
    0 references