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Quasi two-dimensional analysis of the surface potential for poly-Si thin film transistors based on the channel potential - MaRDI portal

Quasi two-dimensional analysis of the surface potential for poly-Si thin film transistors based on the channel potential (Q2919384)

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scientific article; zbMATH DE number 6089538
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English
Quasi two-dimensional analysis of the surface potential for poly-Si thin film transistors based on the channel potential
scientific article; zbMATH DE number 6089538

    Statements

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    2 October 2012
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    quasi two-dimensional analysis
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    surface potential
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    channel potential
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    polycrystalline silicon thin film transistors (poly-Si TFTs)
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    strong inversion region
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    relative high gate and low drain biases
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    Quasi two-dimensional analysis of the surface potential for poly-Si thin film transistors based on the channel potential (English)
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