NEW POSSIBILITIES FOR OBTAINING STEEPLY NONLINEAR CURRENT–VOLTAGE CHARACTERISTICS IN SOME SEMICONDUCTOR STRUCTURES (Q3062699)
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scientific article
| Language | Label | Description | Also known as |
|---|---|---|---|
| English | NEW POSSIBILITIES FOR OBTAINING STEEPLY NONLINEAR CURRENT–VOLTAGE CHARACTERISTICS IN SOME SEMICONDUCTOR STRUCTURES |
scientific article |
Statements
NEW POSSIBILITIES FOR OBTAINING STEEPLY NONLINEAR CURRENT–VOLTAGE CHARACTERISTICS IN SOME SEMICONDUCTOR STRUCTURES (English)
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28 December 2010
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resonant tunneling structure
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Schottky barrier
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transmission rates
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current-voltage characteristics
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steep nonlinearity
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