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A complete analytic surface potential-based core model for intrinsic nanowire surrounding-gate MOSFETs - MaRDI portal

A complete analytic surface potential-based core model for intrinsic nanowire surrounding-gate MOSFETs (Q3394239)

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A complete analytic surface potential-based core model for intrinsic nanowire surrounding-gate MOSFETs
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    A complete analytic surface potential-based core model for intrinsic nanowire surrounding-gate MOSFETs (English)
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    28 August 2009
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    non-classical MOS transistor
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    surrounding-gate MOSFETs
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    device physics
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    surface potential model
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    non-charge-sheet approximation
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