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Localization and quantification of noise sources in four‐gate field‐effect‐transistors - MaRDI portal

Localization and quantification of noise sources in four‐gate field‐effect‐transistors (Q3585576)

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Localization and quantification of noise sources in four‐gate field‐effect‐transistors
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    Localization and quantification of noise sources in four‐gate field‐effect‐transistors (English)
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    20 August 2010
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    four-gate transistor
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    low frequency noise
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    multiple-gate transistor
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    two-dimensional (2D) modeling
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    junction FET (JFET)
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