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A quantum-confinement model for surrounding-gate MOSFETS from subthreshold to strong-inversion regions - MaRDI portal

A quantum-confinement model for surrounding-gate MOSFETS from subthreshold to strong-inversion regions (Q362266)

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scientific article; zbMATH DE number 6199709
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English
A quantum-confinement model for surrounding-gate MOSFETS from subthreshold to strong-inversion regions
scientific article; zbMATH DE number 6199709

    Statements

    A quantum-confinement model for surrounding-gate MOSFETS from subthreshold to strong-inversion regions (English)
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    20 August 2013
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    surrounding gate
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    quantum-confinement effects
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    potential energy
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    MOSFET
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    Identifiers