A quantum-confinement model for surrounding-gate MOSFETS from subthreshold to strong-inversion regions

DOI10.1007/S11432-012-4641-4zbMATH Open1270.81103OpenAlexW2105466057MaRDI QIDQ362266

Zunchao Li, Lin Lin Liu

Publication date: 20 August 2013

Published in: Science China Information Sciences (Search for Journal in Brave)

Full work available at URL: http://engine.scichina.com/doi/10.1007/s11432-012-4641-4

zbMATH Keywords

potential energyMOSFETquantum-confinement effectssurrounding gate

Mathematics Subject Classification ID

Special quantum systems, such as solvable systems (81Q80)

Cites Work

• Quantum-Mechanical Study on Surrounding-Gate Metal-Oxide-Semiconductor Field-Effect Transistors

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A new rule for MESFET gate charge division based on the energy conservation principle ⋮ A compact quantum surface potential model for a MOSFET device

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