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AN ANALYSIS OF THE HYDRODYNAMIC SEMICONDUCTOR DEVICE MODEL — BOUNDARY CONDITIONS AND SIMULATIONS - MaRDI portal

AN ANALYSIS OF THE HYDRODYNAMIC SEMICONDUCTOR DEVICE MODEL — BOUNDARY CONDITIONS AND SIMULATIONS (Q4872545)

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scientific article; zbMATH DE number 859311
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AN ANALYSIS OF THE HYDRODYNAMIC SEMICONDUCTOR DEVICE MODEL — BOUNDARY CONDITIONS AND SIMULATIONS
scientific article; zbMATH DE number 859311

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    AN ANALYSIS OF THE HYDRODYNAMIC SEMICONDUCTOR DEVICE MODEL — BOUNDARY CONDITIONS AND SIMULATIONS (English)
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    17 June 1996
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    multi-dimensional hydrodynamic model
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    semiconductor device simulation
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    energy method
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    boundary integrals
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    finite element
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    Boltzmann transport equation
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