AN ANALYSIS OF THE HYDRODYNAMIC SEMICONDUCTOR DEVICE MODEL — BOUNDARY CONDITIONS AND SIMULATIONS (Q4872545)
From MaRDI portal
| This is the item page for this Wikibase entity, intended for internal use and editing purposes. Please use this page instead for the normal view: AN ANALYSIS OF THE HYDRODYNAMIC SEMICONDUCTOR DEVICE MODEL — BOUNDARY CONDITIONS AND SIMULATIONS |
scientific article; zbMATH DE number 859311
| Language | Label | Description | Also known as |
|---|---|---|---|
| English | AN ANALYSIS OF THE HYDRODYNAMIC SEMICONDUCTOR DEVICE MODEL — BOUNDARY CONDITIONS AND SIMULATIONS |
scientific article; zbMATH DE number 859311 |
Statements
AN ANALYSIS OF THE HYDRODYNAMIC SEMICONDUCTOR DEVICE MODEL — BOUNDARY CONDITIONS AND SIMULATIONS (English)
0 references
17 June 1996
0 references
multi-dimensional hydrodynamic model
0 references
semiconductor device simulation
0 references
energy method
0 references
boundary integrals
0 references
finite element
0 references
Boltzmann transport equation
0 references