DISCRETE STOCHASTIC SIMULATION OF THE ELECTRONS AND HOLES RECOMBINATION IN THE 2D AND 3D INHOMOGENEOUS SEMICONDUCTOR (Q5150762)

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scientific article; zbMATH DE number 7310362
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English
DISCRETE STOCHASTIC SIMULATION OF THE ELECTRONS AND HOLES RECOMBINATION IN THE 2D AND 3D INHOMOGENEOUS SEMICONDUCTOR
scientific article; zbMATH DE number 7310362

    Statements

    DISCRETE STOCHASTIC SIMULATION OF THE ELECTRONS AND HOLES RECOMBINATION IN THE 2D AND 3D INHOMOGENEOUS SEMICONDUCTOR (English)
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    15 February 2021
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    recombination
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    semiconductor
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    diffusion
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    tunnelling
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    stochastic simulation
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    cellular automata
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