Investigation into MIS structures based on graded-band-gap hetero-epitaxial HgCdTe grown by molecular-beam epitaxy using photo-emf and conductivity methods (Q610237)
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scientific article; zbMATH DE number 5822669
| Language | Label | Description | Also known as |
|---|---|---|---|
| English | Investigation into MIS structures based on graded-band-gap hetero-epitaxial HgCdTe grown by molecular-beam epitaxy using photo-emf and conductivity methods |
scientific article; zbMATH DE number 5822669 |
Statements
Investigation into MIS structures based on graded-band-gap hetero-epitaxial HgCdTe grown by molecular-beam epitaxy using photo-emf and conductivity methods (English)
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3 December 2010
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mercury cadmium telluride
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metal-dielectric-semiconductor structure
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graded-band-gap layers
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admittance
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photo-emf
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