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DC gain analysis of scaled CMOS op amp in sub-100 nm technology nodes: A research based on channel length modulation effect - MaRDI portal

DC gain analysis of scaled CMOS op amp in sub-100 nm technology nodes: A research based on channel length modulation effect (Q615254)

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scientific article; zbMATH DE number 5832612
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English
DC gain analysis of scaled CMOS op amp in sub-100 nm technology nodes: A research based on channel length modulation effect
scientific article; zbMATH DE number 5832612

    Statements

    DC gain analysis of scaled CMOS op amp in sub-100 nm technology nodes: A research based on channel length modulation effect (English)
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    5 January 2011
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    analog circuits
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    complementary metal-oxide-semiconductor (CMOS) analog integrated circuits
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    modeling
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    operational amplifiers
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    simulation
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    technology node
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