Analysis of a bipolar energy-transport model for a metal-oxide-semiconductor diode (Q633689)
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scientific article; zbMATH DE number 5871232
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| English | Analysis of a bipolar energy-transport model for a metal-oxide-semiconductor diode |
scientific article; zbMATH DE number 5871232 |
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Analysis of a bipolar energy-transport model for a metal-oxide-semiconductor diode (English)
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29 March 2011
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The authors consider a simplified bipolar energy-transport model for a metal-oxide-semiconductor (MOS) diode with nonconstant lattice temperature. The existence of weak solutions for the appropriate system of quasilinear elliptic equations with a nonlinear boundary is proved. For a one-dimensional MOS diode an asymptotic analysis is presented along with some numerical results.
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MOS diode
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electron temperature
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lattice temperature
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asymptotic analysis
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