Redistribution of dopant, implanted in a multilayer structure for production of a p-n-junction, during annealing radiative defects (Q637156)
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scientific article; zbMATH DE number 5945333
| Language | Label | Description | Also known as |
|---|---|---|---|
| English | Redistribution of dopant, implanted in a multilayer structure for production of a p-n-junction, during annealing radiative defects |
scientific article; zbMATH DE number 5945333 |
Statements
Redistribution of dopant, implanted in a multilayer structure for production of a p-n-junction, during annealing radiative defects (English)
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2 September 2011
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