Pages that link to "Item:Q1873405"
From MaRDI portal
The following pages link to Electromigration of intergranular voids in metal films for microelectronic interconnects. (Q1873405):
Displaying 15 items.
- Cathode edge displacement by voiding coupled with grain boundary grooving in bamboo like metallic interconnects by surface drift-diffusion under the capillary and electromigration forces (Q833964) (← links)
- A parametric finite element method for fourth order geometric evolution equations (Q870630) (← links)
- Creep flow, diffusion, and electromigration in small scale interconnects (Q1019389) (← links)
- Surface evolution in bare bamboo-type metal lines under diffusion and electric field effects (Q1399667) (← links)
- Grain boundary migration with thermal grooving effects: a numerical approach (Q1691855) (← links)
- A theoretical analysis of the electromigration-induced void morphological evolution under high current density (Q1695572) (← links)
- A phase field model for failure in interconnect lines due to coupled diffusion mechanisms. (Q1852810) (← links)
- An energy stable finite difference method for anisotropic surface diffusion on closed curves (Q2077039) (← links)
- Phase field simulation of healing and growth of voids in interconnects under electric field-induced interface migration (Q2134405) (← links)
- A phase field computational procedure for electromigration with specified contact angle and diffusional anisotropy (Q2205154) (← links)
- Irreversible thermodynamics of triple junctions during the intergranular void motion under the electromigration forces (Q2385836) (← links)
- A phase field model for the electromigration of intergranular voids (Q2468800) (← links)
- Models of void electromigration (Q2730753) (← links)
- A structure‐preserving finite element approximation of surface diffusion for curve networks and surface clusters (Q6090444) (← links)
- Parametric finite element approximations for anisotropic surface diffusion with axisymmetric geometry (Q6119266) (← links)
