Pages that link to "Item:Q1010035"
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The following pages link to Modeling, verification and comparison of short-channel double gate and gate-all-around MOSFETs (Q1010035):
Displaying 9 items.
- Impact of geometric, thermal and tunneling effects on nano-transistors (Q349785) (← links)
- Modeling and simulation of electronic structure, material interface and random doping in nano-electronic devices (Q975119) (← links)
- Compact subthreshold current and capacitance modeling of short-channel double-gate MOSFETs (Q988454) (← links)
- Planar split dual gate MOSFET (Q2519298) (← links)
- An analytical study of undoped symmetric double gate MOSFET (SDG) (Q2889642) (← links)
- Implementation of the symmetric doped double-gate MOSFET model in Verilog-A for circuit simulation (Q3406065) (← links)
- A dc <i>I</i>–<i>V</i> model for short‐channel polygonal enclosed‐layout transistors (Q3615715) (← links)
- Investigation of multi-layered-gate electrode workfunction engineered recessed channel (MLGEWE-RC) sub-50 nm MOSFET: A novel design (Q3626968) (← links)
- PERFORMANCE EVALUATION OF SOURCE HETEROJUNCTION STRAINED CHANNEL GATE ALL AROUND NANOWIRE TRANSISTOR (Q4911462) (← links)
