Pages that link to "Item:Q1010036"
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The following pages link to A compact model for the \(I\)-\(V\) characteristics of an undoped double-gate MOSFET (Q1010036):
Displaying 10 items.
- A compact quantum surface potential model for a MOSFET device (Q988450) (← links)
- The influence of dependence of HEMT's model parameters on gate and drain voltages on upper boundary of LNA's linearity (Q1859968) (← links)
- The gate to body capacitance of a MOSFET by asymptotic analysis (Q2455023) (← links)
- Analytical solution of nonlinear Poisson equation for symmetric double-gate metal-oxide-semiconductor field effect transistors (Q2470210) (← links)
- An analytical study of undoped symmetric double gate MOSFET (SDG) (Q2889642) (← links)
- Accurate prediction of the volume inversion impact on undoped Double Gate MOSFET capacitances (Q3064052) (← links)
- A dc <i>I</i>–<i>V</i> model for short‐channel polygonal enclosed‐layout transistors (Q3615715) (← links)
- Current/Voltage Characteristics of the Short-Channel Double-Gate Transistor. Part I (Q4609599) (← links)
- (Q4864505) (← links)
- Explicit modelling of the double-gate MOSFET with VHDL-AMS (Q5471038) (← links)
