Pages that link to "Item:Q1601555"
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The following pages link to Simulation of coupled diffusion of impurity atoms and point defects under nonequilibrium conditions in local domain (Q1601555):
Displaying 8 items.
- Radiation-stimulated diffusion induced by high-current density nitrogen ion beam processing of steels (Q662791) (← links)
- Computationally-efficient stochastic cluster dynamics method for modeling damage accumulation in irradiated materials (Q2374721) (← links)
- Electronic theory of irradiation-induced disordering and annealing in semiconductors (Q2458152) (← links)
- On the mathematical modelling of multidimensional ion implantation problems (Q2743250) (← links)
- Atomistic analysis of B clustering and mobility degradation in highly B‐doped junctions (Q3585572) (← links)
- THE DEVELOPMENT OF THE RADIATION ENHANCED DIFFUSION MODEL OF BORON IN SILICON (Q4315343) (← links)
- Two-dimensional adaptive simulation of dopant diffusion in silicon (Q5933368) (← links)
- The chemical interaction charged particles with target material under surface treatment of metal with particle beam (Q6192712) (← links)
