Pages that link to "Item:Q2919384"
From MaRDI portal
The following pages link to Quasi two-dimensional analysis of the surface potential for poly-Si thin film transistors based on the channel potential (Q2919384):
Displaying 4 items.
- Modeling of transient drain current overshoot in polycrystalline silicon thin-film transistors (Q462768) (← links)
- Polymeric Thin Film Transistors Modeling in the Presence of Non-Ohmic Contacts (Q2822777) (← links)
- On calculating the electric potential for 2D silicon transistor with a silicon oxide nanochannel (Q3082245) (← links)
- EFFECTS OF GRAIN BOUNDARY WIDTH ON TRANSFER CHARACTERISTICS OF A POLYSILICON THIN-FILM TRANSISTOR (Q5485732) (← links)