Modeling of transient drain current overshoot in polycrystalline silicon thin-film transistors (Q462768)
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scientific article; zbMATH DE number 6359556
| Language | Label | Description | Also known as |
|---|---|---|---|
| English | Modeling of transient drain current overshoot in polycrystalline silicon thin-film transistors |
scientific article; zbMATH DE number 6359556 |
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Modeling of transient drain current overshoot in polycrystalline silicon thin-film transistors (English)
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21 October 2014
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thin film transistor
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transient characteristics
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trap
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self-heating
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equivalent circuit model
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0.675801694393158
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0.6720802783966064
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0.6655040979385376
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0.6388672590255737
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0.6340773105621338
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