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← Investigation of multi-layered-gate electrode workfunction engineered recessed channel (MLGEWE-RC) sub-50 nm MOSFET: A novel design (Q3626968)

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The following pages link to Investigation of multi-layered-gate electrode workfunction engineered recessed channel (MLGEWE-RC) sub-50 nm MOSFET: A novel design (Q3626968):

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DC gain analysis of scaled CMOS op amp in sub-100 nm technology nodes: A research based on channel length modulation effect (Q615254) (← links)

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