Pages that link to "Item:Q4213659"
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The following pages link to Numerical analysis of abrupt heterojunction bipolar transistors (Q4213659):
Displaying 7 items.
- Mathematical approach and optimisation of nanometric base thickness for a SiGeC HBT dedicated to radiofrequency applications (Q2349691) (← links)
- Monte Carlo modelling of abrupt InP/InGaAs HBTs (Q4418191) (← links)
- An efficient algorithm for optimizing the electrical performance of HBTs (Q4418199) (← links)
- A model for abrupt double heterojunction bipolar transistors (Q4458780) (← links)
- Computing Multivalued Input–Output Characteristics in the Circuits Containing Bipolar Transistors (Q4590319) (← links)
- A parallel 3D semiconductor device simulator for gradual heterojunction bipolar transistors (Q4804591) (← links)
- Computational Science – ICCS 2005 (Q5709692) (← links)