Pages that link to "Item:Q554311"
From MaRDI portal
The following pages link to Enhanced numerical analysis of current-voltage characteristics of long wavelength infrared p-on-n HgCdTe photodiodes (Q554311):
Displaying 4 items.
- Investigation into MIS structures based on graded-band-gap hetero-epitaxial HgCdTe grown by molecular-beam epitaxy using photo-emf and conductivity methods (Q610237) (← links)
- Investigation of the dark electrical characteristics of the lateral metal-semiconductor-metal photodetectors using two-dimensional numerical simulation (Q3015384) (← links)
- A closed-form analytic model to study the characteristics of avalanche photodiodes (Q3615098) (← links)
- Modeling the frequency response of p<sup>+</sup>InP/n<sup>−</sup>InGaAs/n<sup>+</sup>InP photodiodes with an arbitrary electric field profile (Q5429025) (← links)