Pages that link to "Item:Q979613"
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The following pages link to Three-dimensional modelling of Ge\(_{1-x}\)Si\(_{x}\) by the travelling solvent method: the effect of rotation and misalignment of the sample (Q979613):
Displaying 3 items.
- Investigation of Ge and C layer deposition on a Si substrate using SIMS profiling (Q662803) (← links)
- Three-dimensional modelling of GeSi growth in presence of axial and rotating magnetic fields (Q1007811) (← links)
- Numerical simulation of GaN single-crystal growth process in ammonothermal autoclave - effects of baffle shape (Q2379415) (← links)