Understanding the contribution of energy and angular distribution in the morphology of thin films using Monte Carlo simulation (Q1990062)

The paper presents just plane numerical results of the sputtering yield parameter computations by the Monte Carlo simulation method. No details are given about physical assumptions, mathematical relations, and approximations applied in the numerical procedure. For a number of different metal and semiconductor targets, the authors give the resulting plots showing how the sputtering efficiency depends on the energy and incident angle of the interacting particle beam for three different types of inert gas particles. The obtained results are in a good agreement with those referenced in literature.