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A novel approach to hedge and compensate the critical dimension variation of the developed-and-etched circuit patterns for yield enhancement in semiconductor manufacturing - MaRDI portal

A novel approach to hedge and compensate the critical dimension variation of the developed-and-etched circuit patterns for yield enhancement in semiconductor manufacturing (Q337307)

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scientific article; zbMATH DE number 6650784
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English
A novel approach to hedge and compensate the critical dimension variation of the developed-and-etched circuit patterns for yield enhancement in semiconductor manufacturing
scientific article; zbMATH DE number 6650784

    Statements

    A novel approach to hedge and compensate the critical dimension variation of the developed-and-etched circuit patterns for yield enhancement in semiconductor manufacturing (English)
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    10 November 2016
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    critical dimension
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    yield enhancement
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    tool affinity
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    tool dispatching
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    feed-forward control
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    run-to-run (R2R)
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    manufacturing intelligence
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