Qualitative simulation of the growth of electrolessly deposited Cu thin films (Q410427)

Summary: Electroless deposition for fabricating copper (Cu) interconnects of integrated circuits has drawn attention due to its low processing temperature, high deposition selectivity, and high coverage. In this paper, three-dimensional computer simulations of the qualitative growth properties of Cu particles and two-dimensional simulations of the trench-filling properties are conducted. The mathematical model employed in the study is a reaction-diffusion equation. An implicit finite difference discretization with a red-black Gauss-Seidel method as a solver is proposed for solving the reaction-diffusion equation. The simulated deposition properties agree with those observed in experimentation. Alternatives to improve the deposition properties are also discussed.