Pages that link to "Item:Q4315343"
From MaRDI portal
The following pages link to THE DEVELOPMENT OF THE RADIATION ENHANCED DIFFUSION MODEL OF BORON IN SILICON (Q4315343):
Displaying 5 items.
- Radiation-stimulated diffusion induced by high-current density nitrogen ion beam processing of steels (Q662791) (← links)
- Simulation of coupled diffusion of impurity atoms and point defects under nonequilibrium conditions in local domain (Q1601555) (← links)
- Electronic theory of irradiation-induced disordering and annealing in semiconductors (Q2458152) (← links)
- The model of radiation-induced conductivity in silicon (Q2830689) (← links)
- Atomistic analysis of B clustering and mobility degradation in highly B‐doped junctions (Q3585572) (← links)