Pages that link to "Item:Q988454"
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The following pages link to Compact subthreshold current and capacitance modeling of short-channel double-gate MOSFETs (Q988454):
Displaying 8 items.
- DC gain analysis of scaled CMOS op amp in sub-100 nm technology nodes: A research based on channel length modulation effect (Q615254) (← links)
- Modeling, verification and comparison of short-channel double gate and gate-all-around MOSFETs (Q1010035) (← links)
- Accurate prediction of the volume inversion impact on undoped Double Gate MOSFET capacitances (Q3064052) (← links)
- Implementation of the symmetric doped double-gate MOSFET model in Verilog-A for circuit simulation (Q3406065) (← links)
- A dc <i>I</i>–<i>V</i> model for short‐channel polygonal enclosed‐layout transistors (Q3615715) (← links)
- Investigation of multi-layered-gate electrode workfunction engineered recessed channel (MLGEWE-RC) sub-50 nm MOSFET: A novel design (Q3626968) (← links)
- Current/Voltage Characteristics of the Short-Channel Double-Gate Transistor. Part I (Q4609599) (← links)
- A novel empirical study of the two-dimensional non-linear drain-current behaviour in sub-micrometre MOS transistors (Q5318266) (← links)
