Pages that link to "Item:Q4320632"
From MaRDI portal
The following pages link to The oxidation process of silicon: Modelling and mathematical treatment (Q4320632):
Displaying 11 items.
- Simulation of tin penetration process in the surface layer of soda-lime-silica float glass (Q546598) (← links)
- Oxidation-induced stresses in the isolation oxidation of silicon (Q1577265) (← links)
- Mathematical model of the process of growing single-crystal silicide films on silicon (Q1909108) (← links)
- Analysis of the kinetic model of a single-stage process for obtaining titanium dioxide (Q2691008) (← links)
- Free boundary problem for a viscous compressible flow associated with oxidation of silicon (Q4209715) (← links)
- Construction of an Asymptotic Model for the Oxidation Process of Silicon (Q4214706) (← links)
- (Q4441535) (← links)
- On modelling thermal oxidation of Silicon I: theory (Q4493651) (← links)
- On modelling thermal oxidation of Silicon II: numerical aspects (Q4493652) (← links)
- (Q4850472) (← links)
- Recent advances in models for thermal oxidation of silicon (Q5956645) (← links)