Pages that link to "Item:Q4458780"
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The following pages link to A model for abrupt double heterojunction bipolar transistors (Q4458780):
Displaying 5 items.
- On the design of base-collector junction of InGaAs/InP DHBT (Q1045417) (← links)
- Mathematical approach and optimisation of nanometric base thickness for a SiGeC HBT dedicated to radiofrequency applications (Q2349691) (← links)
- A dc <i>I</i>–<i>V</i> model for short‐channel polygonal enclosed‐layout transistors (Q3615715) (← links)
- Numerical analysis of abrupt heterojunction bipolar transistors (Q4213659) (← links)
- Monte Carlo modelling of abrupt InP/InGaAs HBTs (Q4418191) (← links)